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SMD Type
Transistors
Silicon NPN Triple Diffusion Planar Type 2SD1250
TO-252
+0.15 1.50 -0.15
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
6.50 +0.2 5.30-0.2
+0.15 -0.15
Features
+0.2 9.70 -0.2 +0.15 0.50 -0.15
Low collector-emitter saturation voltage VCE(sat)
+0.1 0.80-0.1
0.127 max
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
+0.28 1.50 -0.1
+0.25 2.65 -0.1
+0.15 5.55 -0.15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 200 150 6 2 3 1.3 30 150 -55 to +150 W W Unit V V V A
Electrical Characteristics Ta = 25
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE VBE VCE(sat) fT Testconditons IC = 500 iA, IE = 0 IC =5 mA, IB = 0 IE = 500 iA, IC = 0 VCB = 200 V, IE = 0 VEB = 4 V, IC = 0 VCE = 10 V, IC = 150 mA VCE = 10 V, IC = 400 mA VCE = 10 V, IC = 400 mA IC = 500 mA, IB = 50 mA VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 60 50 1.0 1.0 V V MHz Min 200 150 6 50 50 240 Typ Max Unit V V V iA iA
hFE Classification
Rank hFE Q 60 to 140 P 100 to 240
3.80
High forward current transfer ratio hFE which has satisfactory linearity
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